| 000 | 00385nam a2200145Ia 4500 | ||
|---|---|---|---|
| 003 | CGCRI | ||
| 005 | 20140812102756.0 | ||
| 008 | 140225s2014 xx 000 0 eng d | ||
| 040 |
_cCGCRI _bENG |
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| 041 | _hENG | ||
| 100 | _aHuttinger, K. J | ||
| 245 | 4 | _aThe effect of oxygen traces on the nitriding of high-purity silicon between 1250 and 1380 degree | |
| 260 | _c1970 | ||
| 942 | _cBK | ||
| 999 |
_c6778 _d6778 |
||
| 856 |
_uhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=6778 _yhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=6778 |
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