000 00437nam a2200169Ia 4500
003 CGCRI
005 20140812102804.0
008 140225s2014 xx 000 0 eng d
020 _a0-306-68322-9
040 _cCGCRI
_bENG
041 _hENG
100 _aConnolly, T F. ed
245 _aSemiconductors: Preparation, crystal growth, and selected properties
260 _aIFI/Plenuam
_bNew York
_c1972
300 _axiv, 218
942 _cBK
999 _c7429
_d7429
856 _uhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=7429
_yhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=7429