| 000 | 00389nam a2200145Ia 4500 | ||
|---|---|---|---|
| 003 | CGCRI | ||
| 005 | 20140812102829.0 | ||
| 008 | 140225s2014 xx 000 0 eng d | ||
| 040 |
_cCGCRI _bENG |
||
| 041 | _hENG | ||
| 100 | _aKoenings, J. and others | ||
| 245 | _aDeposition of SiO2 with low impurity content by oxidation of SiCl4 in a nonisothermal plasma | ||
| 260 | _c1975 | ||
| 942 | _cBK | ||
| 999 |
_c8801 _d8801 |
||
| 856 |
_uhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=8801 _yhttp://14.139.222.13:80/cgi-bin/koha/opac-detail.pl?biblionumber=8801 |
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